Linear magnetoresistance in n-type silicon due to doping density fluctuations
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منابع مشابه
Linear magnetoresistance in n-type silicon due to doping density fluctuations
We report the observation of a large linear magnetoresistance in the ohmic regime in commonplace commercial n-type silicon wafer with a P dopant density of (1.4±0.1) ×10(15) cm(-3), and report measurements of it in the temperature range 30-200 K. It arises from the deformation of current paths, which causes a part of the Hall field to be detected at the voltage probes. In short, wide samples we...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2012
ISSN: 2045-2322
DOI: 10.1038/srep00565